inchange semiconductor product specification silicon pnp power transistors MJ15004 description ? with to-3 package ? complement to type mj15003 ? excellent safe operating area applications ? for high power audio,disk head positioners and other linear applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -140 v v ceo collector-emitter voltage open base -140 v v ebo emitter-base voltage open collector -5 v i c collector current -20 a i b base current -5 a i e emitter current 25 a p d total power dissipation t c =25 ?? 250 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.7 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors MJ15004 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-0.2a ;i b =0 -140 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.0 v v be base-emitter on voltage i c =-5a ; v ce =-2v -2.0 v i ceo collector cut-off current v ce =-140v; i b =0 -0.25 ma i cex collector cut-off current v ce =-140v; v be(off) =-1.5v t c =150 ?? -0.1 -2.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-5a ; v ce =-2v 25 150 v ce =-50vdc,t=1 s, nonrepetitive -5 i s/b second breakdown collector current with base forward biased v ce =-100vdc,t=1 s, nonrepetitive -1 a c ob output capacitance i e =0 ; v cb =-10v;f=1.0mhz 1000 pf f t transition frequency i c =-0.5a ; v ce =-10v;f=0.5mhz 2 mhz
inchange semiconductor product specification 3 silicon pnp power transistors MJ15004 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)
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